1 2 pin 16.5 0.3 10.2 0.2 15.2 0.5 4.0 0.3 13.5 0.5 5.0 0.1 1.4 0.1 0.6 0.1 4.5 0.2 3.1 +0.2 -0.1 |? 3 . 3 0 .1 |? 3 . 2 0 . 2 8.2 0.2 2.6 0.2 0.6 0.1 features mechanical data p o s i t i on: a ny maximum ratings and electrical characteristics ratings at 25 a m b i ent t e m pe r a t u r e un l e s s o t h e r w i s e s pe c i f i ed. units maximum recurrent peak reverse voltage v rrm v max imum rms v oltage v r m s v maximum dc blocking voltage v dc v maximum average forw ard total device 11111111 m rectif ied current @t c = 1 2 5 c i f (a v ) a peak forw ard surge current 8.3ms single half b s i ne - w a v e s u pe r i m p o s e d on r ated l o a d i f s m a m a x i m u m f o r w a r d (i v o l ta g e ( i f = 8.0 a , t c = 2 5 ) ( n ote 1 ) ( i f = 16 a , t c = 2 5 ) f = 8.0 a , t c = 1 2 5 ) m a x i m u m r e v e r s e c u r r ent @ t c = 2 5 at rated dc blocking voltage @t c = 1 2 5 maximum thermal resistance (note 2) r j c k/w operating junction temperature range t j storage temperature range t stg 2 . t h er m al r e s i s t a n c e f r om j u n c t i on t o cas e . m a 30 35 40 45 50 60 80 100 8.0 150 3 0 35 40 45 50 60 80 100 v o l t a g e r a n g e: 3 0 - 100 v curr e n t : 8.0 a metal silicon junction, majority carrier conduction. ca s e : j e d e c ito-220ac , m o l ded p l a s t i c body schottky barrier rectifier h i gh c u r r ent c apa c i t y , l o w f o r w a r d v o l t age d r op. note: 1. pulse test:300 s pulse width,1% duty cy cle. - 5 5 - --- + 1 50 - 5 5 - --- + 15 0 t e r m i na l s : s o l de r a b l e per m i l - s t d - 750, 1 1 m e t hod 2026 i r v f 0.1 0.5 3.0 ito-220ac mbr f 8 3 0 - - - mbr f 8100 mbr f mbrf mbrf mbrf mbrf mbrf mbrf mbrf 830 835 840 84 5 850 860 880 8100 g ua r d r i ng f or o v er v o l t age p r o t e c t i on. high surge capacity. for use in low voltage, high frequency inverters, free 111 wheeling, and polarity protection applications. p o l a r i t y : a s m a r k e d w e i gh t : 0.056 ounces,1.587 gram 15 50 v 0 . 57 0 . 70 0 . 84 0.70 - 0. 80 0.85 0. 95 - single phase,half wave,60hz,resistive or inductive load.for capactive load,derate current by 20%. dimensions in millimeters 21 25 28 32 35 42 56 70 diode semiconductor korea www.diode.kr
pulse width=300 s 1 % d u ty c ycle . 2 . 4 . 6 . 8 1.0 1 . 2 1 . 4 1 . 6 1 . 8 2.0 2.2 1 1 0 1 0 0 2 0 0 mbr830-mbr845 mbr850-mbr860 mbr880-mbr8100 10 04060 20 100 120 140 80 t c = 2 5 0.1 1.0 .01 t c = 1 25 0 2 4 25 50 75 100 125 150 6 8 1 0 0 3 0 1 100 150 60 9 0 120 10 8.3ms single half sine wave t j =125 amperes average forward output current, amperes fi g. 3 -- typical forward characteri sti c fi g. 4 -- typi cal reverse characteristi c i n s t a n t a n e o u s f o r w a r d v o l t a g e , v o l t s nu m be r o f c y c l e s a t 6 0 h z case t e m pe r a t ur e , instantaneous forward current, peak forward surge current, f i g . 2 - - f o r w ard d e ra t i n g cur v e amperes micro amperes pe r c e n t o f r a t e d p e ak r eve r se v o l t a g e ,% fi g. 1 -- peak forward surge current instantaneous reverse current, mbrf830 - - - mbrf8100 www.diode.kr diode semiconductor korea
|
